| PART |
Description |
Maker |
| RFP30N06LE RF1S30N06LE RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
|
Fairchild Semiconductor
HARRIS[Harris Corporation]
|
| RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM |
70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFF310 2476 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
From old datasheet system
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
|
IRF[International Rectifier]
|
| IRFAC40 IRFAC40-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
International Rectifier
|
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| RF1K49221 FN4314 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET
2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| BUZ102 C67078-S1351-A2 BUZ102E3045A BUZ102E3249 |
N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| IXTT30N50P IXTV30N50PS IXTH30N50P IXTQ30N50P |
N-Channel Enhancement Mode Avalanche Rated
MOSFET N-CH 500V 30A TO-3P
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| BUZ104SL Q67040-S4006-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| JANTXV2N7224 JANTX2N7224 2N7224 IRFM150 |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
REPETITIVE AVALANCHE RATED AND dv/dt RATED
HEXFET? TRANSISTOR
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STPS30H60C STPS30H60CFP STPS30H60CG-TR STPS30H60CT |
Avalanche rated
|
STMicroelectronics
|
